IBM could make computers 200 times faster
15 November 2017 | Written by La redazione
A team from IBM Research claims to have made a breakthrough in computational memory by successfully using one million phase change memory (PCM) devices to run an unsupervised machine learning algorithm. The IBM team’s PCM device was made from a germanium antimony telluride alloy stacked and sandwiched between two electrodes. “This prototype technology is expected to yield 200x improvements in both speed and energy efficiency, making it highly suitable for enabling ultra-dense, low-power, and massively-parallel computing systems for applications in AI,” according to a post on IBM Research’s blog.